منابع مشابه
Operation of GaN : Er Thin Film Electroluminescent Display Devices
Thin-film electroluminescence has been obtained from GaN:Er deposited directly on amorphous dielectric layers. Electroluminescent device (ELD) structures consisting of a dielectric/GaN/dielectric were formed on p-Si substrates. In contrast to previous GaN:Er ELDs which used epitaxial growth conditions on crystalline substrates and were operated under DC bias, these ELDs were operated under AC b...
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A new technique for obtaining energy-variable multicolor cathodoluminescent display screensis presented. This technique employs radio frequency ion plasma sputtering of one thin-film phosphor material over a dissimilar phosphor substrate. The technique employed differs from the old "Penetron" screen inthat the substrate and the secondary phosphor layer are single-crystal materials. This results...
متن کاملMethods of simulating thin film deposition using spray pyrolysis techniques
Integration of thin tin oxide film formation into CMOS technology is a fundamental step to realize sensitive smart gas sensor devices. Spray pyrolysis is a deposition technique which has the potential to fulfil this requirement. A model for spray pyrolysis deposition is developed and implemented within a Level Set framework. Two models for the topography modification due to spray pyrolysis depo...
متن کامل1 Thin - Film Capacitance
Models for distributed capacitance in a thin lm are derived in the form of a system of local RC diiusion equations coupled by a global elliptic equation. Such models contain the local geometry of the distributed capacitance on which charge is stored and the exchange of current ux on its interface with the medium. Certain singular limits are characterized, and the resulting degenerate initial-bo...
متن کاملThin Film Photoemission Experiments
CP398, Advanced Accelerator Concepts, edited by S. Chattopadhyay, J. McCullough, and E Dahl AIP Press, New York © 1997 747 Downloaded 18 Aug 2009 to 128.97.92.208. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp
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ژورنال
عنوان ژورنال: The Journal of the Institute of Television Engineers of Japan
سال: 1990
ISSN: 0386-6831,1884-9652
DOI: 10.3169/itej1978.44.503